Exercise: Two Terminal Devices

Questions for: Two Terminal Devices

The negative-resistance region of tunnel diodes can be used in the design of ________.
A:
oscillators
B:
switching networks
C:
pulse generators
D:
All of the above
Answer: D
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________ is (are) the most widely used material(s) for solar cells.
A:
Selenium
B:
Silicon
C:
Both selenium and silicon
D:
Cadmium sulfide
Answer: C
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The PIV of Schottky diodes is usually ________ that of a comparable p-n junction unit.
A:
1/2
B:
1/3
C:
1/4
D:
1/5
Answer: B
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LCDs are characteristically ________ LEDs.
A:
the same speed as
B:
much slower than
C:
faster than
D:
much faster than
Answer: B
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Varactor diodes are ________.
A:
semiconductor devices
B:
voltage-dependent
C:
variable capacitors
D:
All of the above
Answer: D
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