Exercise: Materials And Components

Questions for: Materials And Components

From a homogeneous and isotropic dielectric material of dielectric constant ∈r, a small volume element is taken out creating a cavity. The field can be kept homogeneous if Di. (i.e., electric flux density inside the cavity) and D0 (i.e., electric flux density outside the cavity) are such that
A:
D0 = Di
B:
C:
D:
either (a) or (b)
Answer: B

Since the field is homogeneous .

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Semiconductors have a positive temperature coefficient of resistivity.
A:
True
B:
False
C:
D:
Answer: B

In semiconductors the temperature coefficient of resistivity is negative.

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A dielectric is subjected to alternating field. The dielectric losses are potential to
A:
real part of dielectric constant
B:
imaginary part of dielectric constant
C:
both real and imaginary parts of dielectric constant
D:
either real or imaginary part of dielectric constant
Answer: B

Absorption of energy is proportional to imaginary part of complex dielectric constant.

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An homogeneous dielectric material is subjected to an electric field E. If a small cavity is made inside the material, the electric field intensity inside and outside the cavity are different.
A:
True
B:
False
C:
D:
Answer: B

The electric field intensity inside and outside the cavity are equal.

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In a metal the probability of a state 0.1 eV below Fermi level being occupied
A:
is more than the probability of state 0.1 eV above Fermi level being occupied
B:
is the same as the probability of state 0.1 eV above Fermi level being occupied
C:
is less than the probability of state 0.1 eV above Fermi level being occupied
D:
may be equal to or more or less than the probability of state 0.1 eV above Fermi level being occupied
Answer: A
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