Exercise: Materials And Components

Questions for: Materials And Components

Assertion (A): Electron concentration n, hole concentration p and charge concentration ni are related by ni2 = np.

Reason (R): p type semiconductor is obtained by adding trivalent impurity to intrinsic semiconductor.

A:
Both A and R are true and R is correct explanation of A
B:
Both A and R are true but R is not correct explanation of A
C:
A is true but R is false
D:
A is false but R is true
Answer: B
No answer description is available. Let's discuss.
If ∈r = ∈r' - jr" tan δ = .
A:
True
B:
False
C:
D:
Answer: A
No answer description is available. Let's discuss.
The materials having low retentivity are suitable for making
A:
temporary smagnets
B:
weak magnets
C:
permanent magnets
D:
both temporary and permanent magnets
Answer: A
No answer description is available. Let's discuss.

Assertion (A): Drift velocity of electrons is proportional to the applied electric field E.

Reason (R): The average drift velocity per unit field is called mobility.

A:
Both A and R are true and R is correct explanation of A
B:
Both A and R are true but R is not correct explanation of A
C:
A is true but R is false
D:
A is false but R is true
Answer: B
No answer description is available. Let's discuss.
In a valence crystal, the valence electrons
A:
are not shared
B:
are shared between neighbouring atoms
C:
are shared by all atoms
D:
any of the above
Answer: B

In true valence crystals the binding between the atoms is accomplished by the sharing of valence electrons.

This sharing can only be between neighbouring atoms only.

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