Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

Almost all resistors are made in a monolithic integrated circuit
A:
during the entire diffusion
B:
while growing the epitaxial layer
C:
during the base diffusion
D:
during the collector diffusion
Answer: A
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In n channel JFET
A:
ID and VDS are positive but VGS is negative
B:
ID and VGS are positive but VDS is negative
C:
VDS and VGS are positive but ID is negative
D:
ID, VDS and VGS are all positive
Answer: A
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In the saturation region of CE output characteristics of n-p-n transistor, VCE is about
A:
0.5 V
B:
15 V
C:
- 0.5 V
D:
- 15 V
Answer: A
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Assertion (A): The capacitance of a reverse biased pin diode is lower than that of reverse biased p-n diode.

Reason (R): A PIN diode has an intrinsic layer between p and n regions.

A:
Both A and R are true and R is correct explanation of A
B:
Both A and R are true but R is not a correct explanation of A
C:
A is true but R is false
D:
A is false but R is true
Answer: A
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Which of the following is anti-ferromagnetic material?
A:
CrSb
B:
NIO
C:
MnO
D:
All of the above
Answer: D
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