Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

For a P-N diode, the number of minority carriers crossing the junction depends on
A:
forward bias voltage
B:
potential barrier
C:
rate of thermal generation of electron hole pairs
D:
none of the above
Answer: C
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As compared to bipolar junction transistor, a FET
A:
is less noisy
B:
has better thermal stability
C:
has higher input resistance
D:
all of the above
Answer: D
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Resistivity of copper is nearly
A:
1.56 μ ohm-cm
B:
3.95 μ ohm-cm
C:
14.55 μ ohm-cm
D:
22.05 μ ohm-cm
Answer: A
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Free electrons exist in
A:
first band
B:
second band
C:
third band
D:
conduction band
Answer: D
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An ideal Op-amp is an ideal
A:
voltage controlled current source
B:
voltage controlled voltage source
C:
current controlled current source
D:
current controlled voltage source
Answer: B
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