Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

The conductivity of an intrinsic semiconductor is (symbols have the usual meanings).
A:
generally less than that a doped semiconductor
B:
σi = eni (μn - μp)
C:
σi = eni (μn + μp)
D:
σi = ni (μn - μp)
Answer: C
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In an intrinsic semiconductor, the intrinsic charge concentration at any absolute temperature T is proportional to
A:
T
B:
T2
C:
T3
D:
T4
Answer: C
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The current gain of a bipolar transistor drops at high frequencies because of
A:
transistor capacitance
B:
high current effects in the base
C:
parasitic inductive elements
D:
the early effect
Answer: A
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Assertion (A): FET has characteristics very similar to that of pentode.

Reason (R): Both FET and pentode are voltage controlled devices.

A:
Both A and R are true and R is correct explanation of A
B:
Both A and R are true but R is not a correct explanation of A
C:
A is true but R is false
D:
A is false but R is true
Answer: A
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A FET is to be operated as voltage variable resistor. For this drain to source voltage VDS should be,
A:
74
B:
= VP
C:
< VP
D:
> VP
Answer: C
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