Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

If both emitter base and collector base junctions of a BJT are forward biased, the transistor is in
A:
active region
B:
saturated region
C:
cut off region
D:
inverse mode
Answer: B
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In n type semiconductor, the free electron concentration
A:
is nearly equal to density of donor atoms
B:
is much greater than density of donor atoms
C:
is much less than density of donor atoms
D:
may be equal to or more or less than density of donor atoms
Answer: A
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The potential of suppressor grid (with respect to cathode) is usually
A:
zero
B:
negative
C:
positive
D:
zero or positive
Answer: A
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For signal diodes the PIV rating is usually in the range
A:
1 V to 10V
B:
10 V to 30V
C:
30 V to 150V
D:
150 V to 400V
Answer: C
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In a bipolar transistor, emitter efficiency is about
A:
0.99
B:
0.9
C:
0.8
D:
0.7
Answer: A
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