A sample of N type semiconductor has electron density of 6.25 x 10⁸/cm² at 300 K. If the intrinsic concentration of carriers in this sample is 2.5 x 10¹³/cm³ at this temperature, the hole density works out to be

In order to achieve good stabilization in potential divider method current I₁ through R₁ and R₂ should be

The current density J, free electron mobility μ_n, hole mobility μ_p , magnitude of free electron and hole concentration n_i electric field E and charge on electron e, in intrinsic semiconductor are related as

Ohmic range of metal film resistors is

X-rays cannot penetrate through a thick sheet of