Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

A sample of N-type semiconductor has electron density of 6.25 x 1018/cm3 at 300k. If the intrinsic concentration of carriers in this sample is 2.5 x 1013/cm3 at this temperature the hole density works out to be
A:
106/cm3
B:
108/cm3
C:
1010/cm3
D:
10l2/cm3
Answer: B
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The output V-I characteristics of an Enhancement type MOSFET has
A:
only an ohmic region
B:
only a saturation region
C:
an ohmic region at low voltage value followed by a saturation region at higher voltages.
D:
an ohmic region at large voltage values. Preceded by a saturation region at lower voltages.
Answer: C
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The depletion layer consists of immobile ions.
A:
True
B:
False
C:
D:
Answer: A
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Ohmic range of carbon composition resistors is
A:
10 to 100 ohms
B:
10 to 10 K ohms
C:
10 to 200 ohms
D:
10 to 25 M ohms
Answer: D
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Secondary emission results
A:
when temperature of metals is raised to a level above the crystallization temperature
B:
when metals are subjected to strong magnetic fields
C:
when light rays fall on the metal surface
D:
when a high velocity beam of electrons strikes as metal surface
Answer: B
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