Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

The density of states (i.e. number of states per eV per m3) in the conduction band for energy level E is proportional to
A:
E
B:
E
C:
E1.5
D:
E2
Answer: A
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In a JFET avalanche breakdown occurs when VDS = 22 V and VGS = 0. If VGS = -1 V, the avalanche breakdown will occur at
A:
VDS = 22 V
B:
VDS more than 22 V
C:
VDS equal to or more than 22 V
D:
VDS less than 22 V
Answer: D
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An n channel depletion type MOSFET has
A:
lightly doped p substrate and highly doped n source and drain
B:
highly doped p substrate and highly doped n source and drain
C:
highly doped p substrate and lightly doped n source and drain
D:
lightly doped n substrate and highly doped n source and drain
Answer: A
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n channel FETs are better as compared to p-channel FET because
A:
they are more efficient
B:
they have high switching time
C:
they have higher input impedance
D:
mobility of electrons is more than that of holes
Answer: D
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Mobility is directly proportional to Hall coefficient.
A:
True
B:
False
C:
D:
Answer: A
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