Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

Which of the following is a passive component?
A:
Semiconductor devices
B:
Vacuum tube devices
C:
Capacitors
D:
All of the above
Answer: C
No answer description is available. Let's discuss.
In the forward blocking region of a silicon, controlled rectifier, the SCR is
A:
in the off-state
B:
in the ON state
C:
reverse biased
D:
at the point of breakdown
Answer: A
No answer description is available. Let's discuss.
The range of life time carriers (electrons and holes) is
A:
1 μs to 100 μs
B:
1 nano sec to 1 μs
C:
1 nano sec to hundreds of μs
D:
none of the above
Answer: C
No answer description is available. Let's discuss.
In the equation i = I0 (eV/ηVT - 1), VT =
A:
B:
C:
T x 11600
D:
Answer: B
No answer description is available. Let's discuss.
If E is energy level of electron and EF is Fermi level, then
A:
all quantum states with E less than EF will be occupied at T = 0
B:
all quantum states with E less than EF will be empty at T = 0
C:
some quantum states with E less than EF will be occupied at T = 0
D:
none of the above
Answer: A
No answer description is available. Let's discuss.
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