Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.

Reason (R): The addition of donor impurity creates additional energy levels below conduction band.

A:
Both A and R are true and R is correct explanation of A
B:
Both A and R are true but R is not a correct explanation of A
C:
A is true but R is false
D:
A is false but R is true
Answer: B

A refers to type semiconductor while R refers to n type semiconductor. Both A and R are correct but independent.

If aac for transistor is 0.98 then βac is equal to
A:
51
B:
49
C:
47
D:
45
Answer: B

.

Crossover distortion behaviour is characteristic of
A:
class A O/P stage
B:
class B O/P stage
C:
class AB output stage
D:
common pulse O/P state
Answer: B

It is a characteristics of class B output stage as the amplifier is biased in cut-off region.

In class B amplifier, two transistor are operated in such a way that one is amplify the half cycle and second is amplify -ve half cycle.

Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.

Reason (R): High reverse voltage causes Avalanche effect.

A:
Both A and R are true and R is correct explanation of A
B:
Both A and R are true but R is not a correct explanation of A
C:
A is true but R is false
D:
A is false but R is true
Answer: A

Avalanche breakdown occurs at high reverse voltage.

As compared to an ordinary semiconductor diode, a Schottky diode
A:
has lower cut in voltage
B:
has higher cut in voltage
C:
lower reverse saturation current
D:
both (b) and (c)
Answer: A

Cut in voltage in Schottky diode is about 0.3 V as compared to 0.7 V in ordinary semiconductor diode.

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