Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

The depletion layer around p-n junction in JFET consists of
A:
hole
B:
electron
C:
immobile charges
D:
none of the above
Answer: C

Depletion layer always has immobile charges.

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The carriers of n channel JFET are
A:
free electrons and holes
B:
holes
C:
free electrons or holes
D:
free electrons
Answer: D

In n type semiconductors carriers are electrons.

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When a p-n junction is forward biased
A:
the width of depletion layer increases
B:
the width of depletion layer decreases
C:
the majority carriers move away from the junction
D:
the current is very small
Answer: B

Forward voltage decreases the width of depletion layer leading to low resistance.

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The amount of photoelectric emission current depends on the frequency of incident light.
A:
True
B:
False
C:
D:
Answer: B

It depends on intensity of incident light.

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The units for transconductance are
A:
ohms
B:
amperes
C:
volts
D:
siemens
Answer: D

Its units are the same as the units of conductance.

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