Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

Electrons can be emitted from a metal surface due to high electric field.
A:
True
B:
False
C:
D:
Answer: A

This is called field emission.

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Mobility of electrons and holes are equal.
A:
True
B:
False
C:
D:
Answer: B

Mobility of electrons is more than that of holes.

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In an n type semiconductor
A:
number of free electrons and holes are equal
B:
number of free electrons is much greater than the number of holes
C:
number of free electrons may be equal or less than the number of holes
D:
number of holes is greater than the number of free electrons
Answer: B

Therefore, in n type semiconductor electrons are majority carriers.

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Assertion (A): When reverse voltage across a p-n junction is increased, the junction capacitance decreases.

Reason (R): Capacitance of any layer is inversely proportional to thickness.

A:
Both A and R are true and R is correct explanation of A
B:
Both A and R are true but R is not a correct explanation of A
C:
A is true but R is false
D:
A is false but R is true
Answer: A

Increase in reverse voltage increases the width of depletion layer and decrease of capacitance of layer.

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An intrinsic silicon sample has 2 million free electrons. The number of holes in the sample is
A:
2 million
B:
almost zero
C:
more than 2 million
D:
less than 2 million
Answer: A

In intrinsic semiconductor, the number of free electrons is equal to number of holes.

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