Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

For a photoengraving the mask used is
A:
master mask
B:
slave mask
C:
working mask
D:
photo mask
Answer: C

The mask that is prepared first is called the master mask made from glass substrates covered by thin chromium film.

From the master masks are prepared working masks by contact pointing and used for Photolithography which means Photo engraving.

Assertion (A): The forward resistance of a p-n diode is not constant.

Reason (R): The v-i characteristics of p-n diode is non-linear.

A:
Both A and R are true and R is correct explanation of A
B:
Both A and R are true but R is not a correct explanation of A
C:
A is true but R is false
D:
A is false but R is true
Answer: A

If v-i characteristics is non linear, the ratio v-i is not constant.

The voltage across the secondary of the transformer in a half wave rectifier with a shunt capacitor filter is 50 volts. The maximum voltage that will occur on the reverse biased diode will be
A:
100 V
B:
88 V
C:
50 V
D:
25 V
Answer: A
No answer description is available. Let's discuss.
In a bipolar junction transistor adc = 0.98, ICO= 2 ΞA and 1B = 15 ΞA. The collector current IC is
A:
635 mA
B:
735 mA
C:
835 mA
D:
935 mA
Answer: B

The channel of JFET consists of
A:
p type material only
B:
n type material only
C:
conducting material
D:
either p or n type material
Answer: D

The channel in JFET may be n type or p type. If channel is n type, gate is p type and if channel is p type gate is n type.

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