Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

At room temperature the barrier potential in a silicon diode is
A:
0.1 V
B:
0.3 V
C:
0.7 V
D:
1 V
Answer: C

This 0.7 V is also called cut in voltage. When forward voltage is 0.7 V or less there is no current.

Determine the transistor capacitance of a diffused junction varicap diode of a reverse potential of 4.2 V if C(0) = 80 pf and VT = 0.7 V
A:
42 pf
B:
153.03 pf
C:
13.33 pf
D:
Data inadequate
Answer: A

, Here n = for diffused junction

.

When a large number of atoms are brought together to form a crystal
A:
the energy levels of inner shell electrons are affected appreciably by the presence of other neighbouring atoms.
B:
The energy levels of outer shell electrons are affected appreciably by the presence of other neighbouring atoms.
C:
the energy levels of both inner and outer shell electrons are affected appreciably by the presence of other neighbouring atoms.
D:
none of the above.
Answer: B

Inner shell electrons are tightly bound to the nucleus. Their energy levels cannot be affected by presence of other atoms.

If a sample of germanium and a sample of Si have the impurity density and are kept at room temperature then
A:
both will have equal value of resistivity
B:
both will have equal -ve resistivity
C:
resistivity of germanium will be higher than that of silicon
D:
resistivity of Si will be higher than of germanium
Answer: D

Since the majority of charge carrier is better in Ge than in Si, for the same concentration of charge carriers, the conductivity of Ge is higher than that of Si.

When a p-n junction is reverse biased
A:
holes and electrons move away from the junction
B:
holes and electrons move towards the junction
C:
holes move towards junction and electrons move away from junction
D:
holes move away from junction and electrons move towards junction
Answer: A

Holes and electrons move away from junction and therefore resistance increases to a high value.

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