Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

The early effect in a BJT is caused by
A:
fast turn on
B:
fast turn off
C:
large collector base reverse bias
D:
large emitter base forward bias
Answer: C
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In CE connection, the leakage current of a transistor is about
A:
10 x 10-9 A
B:
5 x 10-6 A
C:
200 x 10-6 A
D:
5 x 10-3 A
Answer: C
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A JFET operates in ohmic region when
A:
VGS = 0
B:
VGS is less than pinch off voltage
C:
VGS = is Positive
D:
VGS = VDS
Answer: B
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Assertion (A): Oxide coated cathodes are very commonly used.

Reason (R): Work function of oxide coated cathode is 1 eV whereas it is 4.5 eV for pure tungsten.

A:
Both A and R are true and R is correct explanation of A
B:
Both A and R are true but R is not a correct explanation of A
C:
A is true but R is false
D:
A is false but R is true
Answer: A

Lower work function leads to higher emission current. Therefore oxide coated cathodes are commonly used.

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Photoconductive devices uses
A:
metallic conductors
B:
good quality insulators
C:
semiconductors
D:
either (a) or (c)
Answer: C
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