Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

For a n-channel JFET with r0 = 10 kW, (VGs= 0 V, VP = - 6 V)the drain resistance rd at VGS= - 3 V is given by
A:
40 kΩ
B:
2.5 kΩ
C:
4.44 kW
D:
120 kW
Answer: A
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In an integrated circuit the SiO2 layers provide
A:
electrical connection to external Ckt.
B:
physical strength
C:
isolation
D:
conducting path.
Answer: C
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Assertion (A): A p-n junction is used as rectifier.

Reason (R): A p-n junction has low resistance in forward direction and high resistance in reverse direction.

A:
Both A and R are true and R is correct explanation of A
B:
Both A and R are true but R is not a correct explanation of A
C:
A is true but R is false
D:
A is false but R is true
Answer: A
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Which rectifier has the best ratio of rectification?
A:
Half wave rectifier
B:
Full wave rectifier
C:
Bridge rectifier
D:
Three phase full wave rectifier
Answer: D
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When a p-n junction is forward biased, the current remains zero till the applied voltage overcomes the barrier potential.
A:
True
B:
False
C:
D:
Answer: A
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