Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

Consider the following circuit configuration
  1. common Emitter
  2. common Base
  3. emitter follower
  4. emitter follower using Darlington pair.
The correct sequence in increasing order of I/P impedance of these configuration:
A:
2, 1, 4, 3
B:
1, 2, 4, 3
C:
2, 1, 3, 4
D:
1, 2, 3, 4
Answer: B
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In modern MOSFETS, the material used for the gate is
A:
high purity silicon
B:
high purity silica
C:
heavily doped polycrystalline silicon
D:
epitaxial grown silicon
Answer: C
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A P-N junction offers
A:
high resistance in forward as well as reverse direction
B:
low resistance in forward as well as reverse direction
C:
conducts in forward direction only
D:
conducts in reverse direction only
Answer: C
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In intrinsic semiconductor magnitude of free electron and hole concentrations are equal.
A:
True
B:
False
C:
D:
Answer: A
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Addition of a small amount of antimony to germanium will result in
A:
formation of P-type semiconductor
B:
more free electrons than holes in the semiconductor
C:
antimony concentrating on the edges of the crystals
D:
increased resistance
Answer: B
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