Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

In a triode the potential of grid (with respect to cathode) is usually
A:
zero
B:
negative
C:
positive
D:
zero or positive
Answer: B
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If both the emitter base and the collector base junctions of a bipolar transistor are forward biased, the transistor is in the
A:
active region
B:
saturated region
C:
cut off region
D:
inverse mode
Answer: B
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Consider the following statements.
  1. Etching
  2. Exposure to UV radiation
  3. Stripping
  4. Developing
After a wafer has been coated with photo resist the correct sequence of these steps in photolithography is
A:
2, 4, 3, 1
B:
2, 4, 1, 3
C:
4, 2, 1, 3
D:
3, 2, 3, 1
Answer: C
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In a p-n-p transistor operating in forward active mode
A:
base is positive with respect to emitter and collector
B:
base is negative with respect to emitter and collector
C:
emitter is positive with respect to base and base is positive with respect to collector
D:
emitter is negative with respect to base and base is positive with respect to collector
Answer: C
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Assertion (A): Field emission is substantially independent of temperature.

Reason (R): When a high electric field is created at metal surface field emission may occur.

A:
Both A and R are true and R is correct explanation of A
B:
Both A and R are true but R is not a correct explanation of A
C:
A is true but R is false
D:
A is false but R is true
Answer: B
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