Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

In a semiconductor avalanche breakdown occurs when
A:
reverse bias exceeds the limiting value
B:
forward bias exceeds the limiting value
C:
forward current exceeds the limiting value
D:
potential barrier is reduced to zero
Answer: A
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Which of the following statement about the photo electric emission is incorrect?
A:
The maximum velocity of emission varies with the frequency of incident light
B:
The maximum velocity of emission varies with the intensity of light
C:
The amount of photoelectric emission is directly proportional to the intensity of light
D:
The quantum yield depends on the frequency and not the intensity of incident light
Answer: B
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The collector to emitter cutoff current (ICE0) of a transmitter is related to collector to base cut off current (ICB0) as
A:
ICE0 = ICB0
B:
ICE0 = a ICB0
C:
ICE0 =
D:
ICE0 =
Answer: C
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At any point on the v-i characteristics of a semiconductor diode, the slope of v-i characteristics is called
A:
resistance of diode
B:
conductance of diode
C:
incremental resistance of diode
D:
incremental conductance of diode
Answer: D
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The conductivity of materials found in nature ranges from 109 ohm-1m-1 to nearly 1018 ohm-1 m-1 from this it can be concluded that the conductivity of silicon in ohm-1 cm-1 will be nearly
A:
0.5 x 10-15
B:
0.5 x 10-21
C:
0.5 x 10-12
D:
0.5 x 10-3
Answer: D
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