Exercise: Electronic Devices And Circuits

Questions for: Electronic Devices And Circuits

In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is
A:
P+ -doped
B:
n+ -doped
C:
used to reduce the parasitic capacitance
D:
located in the emitter region
Answer: C
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The diffusion current is proportional to
A:
applied electric field
B:
concentration gradient of charge carrier
C:
square of the electric field
D:
cube of the applied electric field
Answer: B
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The first and the last critical frequency of an RC driving point impedance function must respectively by
A:
a zero and a pole
B:
a zero and a zero
C:
a pole and a pole
D:
a pole and a zero
Answer: A
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In n type MOSFET, the substrate
A:
is p type
B:
is n type
C:
is metallic
D:
may be p or n type
Answer: A
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A doped semi-conductor is called
A:
impure semi-conductor
B:
dipole semi-conductor
C:
bipolar semi-conductor
D:
extrinsic semi-conductor
Answer: D
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