Exercise: Semiconductor Memory

Questions for: Semiconductor Memory

The time interval between the memory receiving a new address input and the data being available is called _________.
A:
access time
B:
bus speed
C:
read/write speed
D:
write/data speed
Answer: A
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Refreshing DRAM typically must occur every ________.
A:
2 mu.gifs
B:
2 ms
C:
8 mu.gifs
D:
8 ms
Answer: B
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A technique of addressing storage cells on a dynamic RAM that sequentially uses the same inputs for the row and column addresses of the cell is called________.
A:
flash conversion
B:
dynamic refresh
C:
address multiplexing
D:
address strobe
Answer: C
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The data stored in a Mask ROM (MROM) is ___________.
A:
permanent
B:
volatile
C:
erasable
D:
temporary
Answer: A
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The binary data stored in an EEPROM is___________.
A:
volatile
B:
permanent
C:
refreshed
D:
erasable
Answer: D
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