Which of the following antennas uses a number of varying length parallel elements?

The silicon sample with unit cross-sectional area shown below is in thermal equilibrium. The following information is given: T = 300 K, electronic charge = 1.6 x 10^-19C, thermal voltage = 26mV and electron mobility = 1350 cm²/V-s

The magnitude of the electron drift current density at x = 0.5 μm is

In a digital voltmeter the oscillator frequency is 400 kHz and the ramp voltage falls from 8 V to 0 V in 20 ms. What is the number of pulses counted by the counter?

Two identical NMOS transistors M₁ and M₂ are connected as shown below. V_bias is chosen so that both transistors are in saturation. The equivalent g_m of the pair is defined to be
at constant V_out
The equivalent g_m of the pair is

Consider the CMOS circuit shown, where the gate voltage V_G of the n-MOSEFT is increased from zero, while the gate voltage of the p-MOSFET is kept constant at 3 V. Assume that, for both transistor, the magnitude of the threshold voltage is 1 V and the product of the transconductor parameter and the (W/L) ratio, i.e. the quality μC_0x(W/L), is 1mA. V^-2.

For small increase in V_G beyond IV, which of the following gives the correct description of the region of operation of each MOSFET?